2007-03-29 1 bcx69... 1 2 2 3 pnp silicon af transistors ? for general af applications ? high collector current ? high current gain ? low collector-emitter saturation voltage ? complementary type: bcx68 (npn) ? pb-free (rohs compliant) package 1) ? qualified according aec q101 type marking pin configuration package bcx69-10 BCX69-16 bcx69-25 cf cg ch 1=b 1=b 1=b 2=c 2=c 2=c 3=e 3=e 3=e sot89 sot89 sot89 maximum ratings parameter symbol value unit collector-emitter voltage v ceo 20 v collector-base voltage v cbo 25 emitter-base voltage v ebo 5 collector current i c 1 a peak collector current i cm 2 base current i b 100 ma peak base current i bm 200 total power dissipation- t s = 130 c p tot 1 w junction temperature t j 150 c storage temperature t stg -65 ... 150 thermal resistance parameter symbol value unit junction - soldering point 2) r thjs 20 k/w 1 pb-containing package may be available upon special request 2 for calculation of r thja please refer to application note thermal resistance
2007-03-29 2 bcx69... electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 30 ma, i b = 0 v (br)ceo 20 - - v collector-base breakdown voltage i c = 10 a, i e = 0 v (br)cbo 25 - - emitter-base breakdown voltage i e = 1 a, i c = 0 v (br)ebo 5 - - collector-base cutoff current v cb = 25 v, i e = 0 v cb = 25 v, i e = 0 , t a = 150 i cbo - - - - 0.1 100 a dc current gain 1) i c = 5 ma, v ce = 10 v i c = 500 ma, v ce = 1 v, bcx69-10 i c = 500 ma, v ce = 1 v, BCX69-16 i c = 500 ma, v ce = 1 v, bcx69-25 i c = 1 a, v ce = 1 v h fe 50 85 100 160 60 - 100 160 250 - - 160 250 375 - - collector-emitter saturation voltage 1) i c = 1 a, i b = 100 ma v cesat - - 0.5 v base-emitter voltage 1) i c = 5 ma, v ce = 10 v i c = 1 a, v ce = 1 v v be(on) - - 0.6 - - 1 ac characteristics transition frequency i c = 100 ma, v ce = 5 v, f = 20 mhz f t - 100 - mhz 1 pulse test: t < 300s; d < 2%
2007-03-29 3 bcx69... dc current gain h fe = ? ( i c ) v ce = 1 v 10 10 10 10 bcx 69 ehp00475 h ma 0 1 34 fe 3 10 10 2 0 10 5 5 10 1 2 10 5 100 25 -50 555 c ?c ?c ?c collector-emitter saturation voltage i c = ? ( v cesat ), h fe = 10 0 0.4 0.8 bcx 69 ehp00473 v ce sat v ma 10 4 1 10 10 10 2 10 10 3 10 5 5 5 10 0 0.2 0.6 100 25 -50 c ?c ?c ?c base-emitter saturation voltage i c = ? ( v besat ), h fe = 10 10 0 0.6 bcx 69 ehp00472 v be sat 10 ma 10 10 10 4 3 2 1 0 5 5 5 v 0.2 0.4 0.8 1.0 1.2 100 25 -50 c ?c ?c ?c collector current i c = ? ( v be ) v ce = 1v 10 0 0.6 bcx 69 ehp00474 v be 10 ma 10 10 10 4 3 2 1 0 5 5 5 v 0.2 0.4 0.8 1.0 1.2 100 25 -50 c ?c ?c ?c
2007-03-29 4 bcx69... collector cutoff current i cbo = ? ( t a ) v cb = 25 v 10 0 50 100 150 bcx 69 ehp00471 t a 5 10 10 na 10 cb0 5 5 5 10 10 5 4 3 2 1 0 max typ ?c transition frequency f t = ? ( i c ) v ce = 5 v 10 10 10 10 bcx 69 ehp00469 f ma mhz 0123 5 t 3 10 10 2 1 10 5 5 5 c total power dissipation p tot = ? ( t s ) 0 20 40 60 80 100 120 c 150 t s 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 w 1.2 p tot permissible pulse load p totmax / p totdc = ? ( t p ) 10 ehp00470 bcx 69 -6 0 10 5 d = 5 10 1 5 10 2 3 10 10 -5 10 -4 10 -3 10 -2 10 0 s 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t p = d t t p t tot max tot p dc p p t
2007-03-29 5 bcx69... edition 2006-02-01 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2007. all rights reserved. attention please! the information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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